The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method
Date
1995
Authors
Mousa Al- Hasan
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Abstract
The calculation of the electronic structure of Gax In 1-x As and In Asx P1-x alloys using the recursion method is reported. A five-orbitals, sp3s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states is calculated for Ca, In, As and P-sites in a cluster of 216 atoms. The results are in good agreement with other calculations.