The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method
| dc.contributor.author | Mousa Al- Hasan | |
| dc.date.accessioned | 2016-09-07T10:16:40Z | |
| dc.date.available | 2016-09-07T10:16:40Z | |
| dc.date.issued | 1995 | |
| dc.description.abstract | The calculation of the electronic structure of Gax In 1-x As and In Asx P1-x alloys using the recursion method is reported. A five-orbitals, sp3s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states is calculated for Ca, In, As and P-sites in a cluster of 216 atoms. The results are in good agreement with other calculations. | en |
| dc.identifier | 1727-2114 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.11888/1868 | |
| dc.title | The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method | en |
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