Combined effects of pressure, temperature, and magnetic field on energy states of donor impurities in a GaAs/AlGaAs quantum heterostructure
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Date
2017-10-19
Authors
أبوزيد, سماح فايز نمر
Journal Title
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Publisher
An-Najah National University
Abstract
The ground state energy of shallow donor impurity in GaAs/AlGaAs heterostructure with an applied magnetic field along z direction, using exact diagonalization method, had been calculated. The effects of the impurity distance on the ground state energy versus the confining frequency and magnetic field strength had been investigated. The impurity binding energy of the ground state had been calculated as a function of impurity position, confining frequency and magnetic field strength. In addition, the combined effects of pressure and temperature, on the binding energy as a function of magnetic field strength had been studied using the effective-mass approximation. The result is that, the donor impurity binding energy enhances with increasing the pressure while it decreases as the temperature decreases.