Effect of Pressure and Temperature on Preparing PZT Films

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dc.contributor.authorSharif Musameh
dc.date.accessioned2016-09-07T10:16:50Z
dc.date.available2016-09-07T10:16:50Z
dc.date.issued2002
dc.description.abstractFerroelectrics lead zirconate titanate (PZT) thin films were fabricated by pulsed laser deposition on Pt coated Si substrate. The effect of oxygen partial pressure, substrate temperature and time of ablation on the film orientation and composition will be presented. It was found that highly (111) textured PZT films could be grown with careful selection of ablation conditions which are: the oxygen pressure is 300 mT, substrate temperature is 605 C and the ablation time is 16 minutes.en
dc.identifier1727-2114
dc.identifier.urihttp://hdl.handle.net/20.500.11888/1993
dc.titleEffect of Pressure and Temperature on Preparing PZT Filmsen
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An-Najah University Journal for Research - A (Natural Sciences)