Heat Capacity and Entropy of Donor Impurity in Quantum Dot with Gaussian Confinement
يحيى, نهال سعيد
An-Najah National University
In the present work, The ground state energy of shallow donor impurity in GaAs/AlGaAs heterostructure with Gaussian potential using the shifted 1/N expansion method had been calculated. The effects of the impurity on the ground state energy, the dot radius R, confining potential depth V_0 and dimension N had been investigated. The impurity binding energy of the ground state has been calculated as a function of dot radius R, confining potential depth〖 V〗_(0 )and dimension N. we had found that the impurity binding energy of the ground state increases as confining potential depth V_(0 ) increases while it decreases as dot radius R and dimension N increases . In addition, we had also computed the heat capacity C_v and entropy S of donor impurity in QD and investigated the dependence of these quantities on dot radius R, confining potential depth V_0, dimension N and temperature T. the comparison shows that our results are in very good agreement with the reported work.