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dc.contributor.advisorالسعيد, محمد
dc.contributor.authorمعالي, فاطمه هلال هليل
dc.date.accessioned2019-10-29T10:30:34Z
dc.date.available2019-10-29T10:30:34Z
dc.date.issued2018-11-07
dc.identifier.urihttps://hdl.handle.net/20.500.11888/14741
dc.description.abstractIn this thesis, we have produced the number of carriers concentration expression of Silicene channel in Field Effect Transistor (FET) against gate voltage at various temperatures. Furthermore, we have also presented explicit analytical calculations for the conductance of Silicene 2D sheet, using Landauer's Formula, in the presence of an applied perpendicular electric field and the spin-orbital-interaction effect. The calculations show that the electric field and the SOI significantly affect the conductance, band structure and the density of state for the silicene used as a channel in the field effect transistor.en_US
dc.language.isoen_USen_US
dc.publisherAn-Najah National Universityen_US
dc.titleThe Conductance Calculation of Silicene Field Effect Transistoren_US
dc.title.alternativeحسابات الموصليه للترانسستور (FET) المصنع من مادة السيليسينen_US
dc.typeThesisen_US


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