Indium oxide doped with both tin and zinc (ITZO): high density with highly conducting ceramic targets for sputtering TCO thin-film electrodes
dc.contributor.author | I. Saadeddin | |
dc.contributor.author | H. S. Hilal | |
dc.contributor.author | R. Decourt | |
dc.contributor.author | G. Campet | |
dc.contributor.author | B. Pecquenard | |
dc.date.accessioned | 2017-05-03T09:36:59Z | |
dc.date.available | 2017-05-03T09:36:59Z | |
dc.date.issued | 2010-08-02 | |
dc.description.abstract | <p>Indium oxide doped with tin and zinc (ITZO) ceramics have been prepared by sintering powders mixture, which is embedded in alumina crucible, at 1300 °C. This allowed us to easy fabricate large targets with high density suitable for sputtering TCO films. Without using any cold or hot pressing techniques, The ITZO ceramic reaches a high bulk density (~ 92 % of In2O3 theoretical density). XRD diagrams show a high solubility limit for Sn and Zn when they are co-doped into In2O3 forming a solid-solution. They confirm a bixbyte structure typical for In2O3 with no extra peaks that could correspond to Sn and/or Zn based oxides. A very low electrical resistivity is obtained, for [In2O3:Sn0.10]:Zn0.10 (1.7×10-3 Ω.cm, lower than ITO counterpart), due to high carrier mobility. This high mobility is correlated to the strong enhancement of the grain percolation as shown by SEM micrographs.</p> | en |
dc.description.abstract | <p>Indium oxide doped with tin and zinc (ITZO) ceramics have been prepared by sintering powders mixture, which is embedded in alumina crucible, at 1300 °C. This allowed us to easy fabricate large targets with high density suitable for sputtering TCO films. Without using any cold or hot pressing techniques, The ITZO ceramic reaches a high bulk density (~ 92 % of In2O3 theoretical density). XRD diagrams show a high solubility limit for Sn and Zn when they are co-doped into In2O3 forming a solid-solution. They confirm a bixbyte structure typical for In2O3 with no extra peaks that could correspond to Sn and/or Zn based oxides. A very low electrical resistivity is obtained, for [In2O3:Sn0.10]:Zn0.10 (1.7×10-3 Ω.cm, lower than ITO counterpart), due to high carrier mobility. This high mobility is correlated to the strong enhancement of the grain percolation as shown by SEM micrographs.</p> | ar |
dc.identifier.uri | https://hdl.handle.net/20.500.11888/9543 | |
dc.title | Indium oxide doped with both tin and zinc (ITZO): high density with highly conducting ceramic targets for sputtering TCO thin-film electrodes | en |
dc.title | Indium oxide doped with both tin and zinc (ITZO): high density with highly conducting ceramic targets for sputtering TCO thin-film electrodes | ar |
dc.type | Other |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- indium-oxide-doped-both-tin-and-zinc-itzo-high-density-highly-conducting-ceramic-targets-sputtering-.pdf
- Size:
- 85.36 KB
- Format:
- Adobe Portable Document Format
- Description: