Indium Oxide Doped With Both Tin And Zinc (ITZO) High Density With Highly Conducting Ceramic Targets For Sputtering TCO Thin-Film Electrode

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dc.contributor.authorI. Saadeddin
dc.contributor.authorH. S. Hilala
dc.contributor.authorR. Decourt
dc.contributor.authorG. Campet
dc.contributor.authorB. Pecquenard
dc.date.accessioned2017-05-03T09:34:49Z
dc.date.available2017-05-03T09:34:49Z
dc.date.issued2012-03-26
dc.description.abstract<p>Indium oxide doped with tin and zinc (ITZO) ceramics have been prepared by sintering powders mixture, which is embedded in alumina crucible, at 1300 °C. This allowed us to easy fabricate large targets with high density suitable for sputtering TCO films. Without using any cold or hot pressing techniques, The ITZO ceramic reaches a high bulk density (~ 92 % of In2O3 theoretical density). XRD diagrams show a high solubility limit for Sn and Zn when they are co-doped into In2O3 forming a solid-solution. They confirm a bixbyte structure typical for In2O3 with no extra peaks that could correspond to Sn and/or Zn based oxides. A very low electrical resistivity is obtained, for [In2O3:Sn0.10]:Zn0.10 (1.7×10-3 Ω.cm, lower than ITO counterpart), due to high carrier mobility. This high mobility is correlated to the strong enhancement of the grain percolation as shown by SEM micrographs</p>en
dc.description.abstract<p>Indium oxide doped with tin and zinc (ITZO) ceramics have been prepared by sintering powders mixture, which is embedded in alumina crucible, at 1300 °C. This allowed us to easy fabricate large targets with high density suitable for sputtering TCO films. Without using any cold or hot pressing techniques, The ITZO ceramic reaches a high bulk density (~ 92 % of In2O3 theoretical density). XRD diagrams show a high solubility limit for Sn and Zn when they are co-doped into In2O3 forming a solid-solution. They confirm a bixbyte structure typical for In2O3 with no extra peaks that could correspond to Sn and/or Zn based oxides. A very low electrical resistivity is obtained, for [In2O3:Sn0.10]:Zn0.10 (1.7×10-3 Ω.cm, lower than ITO counterpart), due to high carrier mobility. This high mobility is correlated to the strong enhancement of the grain percolation as shown by SEM micrographs</p>ar
dc.identifier.urihttps://hdl.handle.net/20.500.11888/9022
dc.titleIndium Oxide Doped With Both Tin And Zinc (ITZO) High Density With Highly Conducting Ceramic Targets For Sputtering TCO Thin-Film Electrodeen
dc.titleIndium Oxide Doped With Both Tin And Zinc (ITZO) High Density With Highly Conducting Ceramic Targets For Sputtering TCO Thin-Film Electrodear
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The First International Palestinian Conference on Nanotechnology for Advanced Material and Devices