The Effects of Magnetic and Electric Fields on Donor Impurity States in GaAs Quantum Dot

dc.contributor.authorياسين, اسماء زهير مدحت
dc.date.accessioned2021-05-30T08:58:16Z
dc.date.available2021-05-30T08:58:16Z
dc.date.issued2018-06-03
dc.description.abstractThe effects of magnetic and electric fields on the donor impurity states confined in a GaAs two dimensional (2D) parabolic quantum dot has been studied. The impurity energy and binding energy of the ground state and some low-lying excited states were calculated. The Hamiltonian was solved using 1/N expansion method within the effective mass approximation. The results had been displayed as a function of physical parameters: confinement strength〖 ω〗_0, magnetic field strength ω_c, and electric field strength F. In addition, we have studied the magnetic properties of the donor impurity in the quantum dot by calculating the magnetization and the magnetic susceptibility. The dependence of the magnetization and the magnetic susceptibility quantities on temperature, confinement strength ω_0, magnetic field ω_c, and electric field strength F were investigated. The comparisons show that our results are in very good agreement with reported worksen_US
dc.identifier.urihttps://hdl.handle.net/20.500.11888/15685
dc.language.isoen_USen_US
dc.publisherAn-Najah National Universityen_US
dc.titleThe Effects of Magnetic and Electric Fields on Donor Impurity States in GaAs Quantum Doten_US
dc.title.alternativeتأثير المجالين المغناطيسي والكهربائي على مستويات الشوائب المانحة في نقطه كميه مصنوعه من ماده GaAsen_US
dc.typeThesisen_US
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
asmaa.PDF
Size:
1.49 MB
Format:
Adobe Portable Document Format
Description:
Full Text
License bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Collections