The First International Palestinian Conference on Nanotechnology for Advanced Material and Devices

Indium oxide doped with tin and zinc (ITZO) ceramics have been prepared by sintering powders mixture, which is embedded in alumina crucible, at 1300 °C. This allowed us to easy fabricate large targets with high density suitable for sputtering TCO films. Without using any cold or hot pressing techniques, The ITZO ceramic reaches a high bulk density (~ 92 % of In2O3 theoretical density). XRD diagrams show a high solubility limit for Sn and Zn when they are co-doped into In2O3 forming a solid-solution. They confirm a bixbyte structure typical for In2O3 with no extra peaks that could correspond to Sn and/or Zn based oxides. A very low electrical resistivity is obtained, for [In2O3:Sn0.10]:Zn0.10 (1.7×10-3 Ω.cm, lower than ITO counterpart), due to high carrier mobility. This high mobility is correlated to the strong enhancement of the grain percolation as shown by SEM micrographs