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dc.contributor.advisorالسعيد, محمد
dc.contributor.authorريحان, هناء محمد
dc.date.accessioned2019-10-29T10:44:58Z
dc.date.available2019-10-29T10:44:58Z
dc.date.issued2018-03-31
dc.identifier.urihttps://hdl.handle.net/20.500.11888/14743
dc.description.abstractThe magnetic properties like magnetization and susceptibility of donor impurity in quantum pseudo-dot (QPD) are studied in the presence of the applied external magnetic and electric fields. The shifted 1/N expansion method has been used to solve the Hamiltonian of the donor impurity in (QPD). We calculate the energy eigenvalue for the ground state and low lying state as a function of magnetic field strength with various quantum dot physical parameters. Our computed energy results of the QPD show very good agreement compared with the corresponding reported work. These parameters are: the presence of the impurity, the electric field strength η, the magnetic field strength ωc, the confinement pseud-dot potential: radius of QD (R0) and the confinement strength (V0). The dependencies of the binding energy and statistical energy on the electric field strength η, the magnetic field strength ωc, and the confining pseud-dot potential (R0 , V0) are presented. Our results reveal that the presence of the impurity, the electric field strength η, the magnetic field strength ωc, and the confinement pseud-dot potential (R0 , V0) have significant influences on magnetization and susceptibility. The magnetization and susceptibility curves show oscillating behavior which is attributed to the energy level crossings of the QPD spectra.  en_US
dc.language.isoen_USen_US
dc.publisherAn-Najah National Universityen_US
dc.titleMagnetic properties of donor impurity in GaAs semiconductor quantum pseudo-dot system (GaAs)en_US
dc.title.alternativeالخصائص المغناطيسية لشائبة مانحة في نقطة كمية شبه موصل من مادة (GaAS)en_US
dc.typeThesisen_US


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