Magnetic properties of donor impurity in GaAs semiconductor quantum pseudo-dot system (GaAs)
The magnetic properties like magnetization and susceptibility of donor impurity in quantum pseudo-dot (QPD) are studied in the presence of the applied external magnetic and electric fields. The shifted 1/N expansion method has been used to solve the Hamiltonian of the donor impurity in (QPD). We calculate the energy eigenvalue for the ground state and low lying state as a function of magnetic field strength with various quantum dot physical parameters. Our computed energy results of the QPD show very good agreement compared with the corresponding reported work. These parameters are: the presence of the impurity, the electric field strength η, the magnetic field strength ωc, the confinement pseud-dot potential: radius of QD (R0) and the confinement strength (V0). The dependencies of the binding energy and statistical energy on the electric field strength η, the magnetic field strength ωc, and the confining pseud-dot potential (R0 , V0) are presented. Our results reveal that the presence of the impurity, the electric field strength η, the magnetic field strength ωc, and the confinement pseud-dot potential (R0 , V0) have significant influences on magnetization and susceptibility. The magnetization and susceptibility curves show oscillating behavior which is attributed to the energy level crossings of the QPD spectra.