Palestinian Conference on Modern Trends in Mathematics and Physics II 
 

77 
 

. Indium oxide doped with both tin and zinc (ITZO): high 
density with highly conducting ceramic targets for sputtering 

TCO thin-film electrodes. 
 

I. SaadeddinP

*a
P, H. S. HilalP

a
P, R. DecourtP

b
P, G. CampetP

b
P, B. PecquenardP

b 
 

P

a
P An-Najah National University, PO Box 7, Nablus (Palestine). 

P

b
P ICMCB-CNRS, Université Bordeaux 1, 87 avenue du Dr. A. 

Schweitzer, 33608 cedex (France). 
 

Abstract: 
 

Indium oxide doped with tin and zinc (ITZO) ceramics have 
been prepared by sintering powders mixture, which is embedded in 
alumina crucible, at 1300 °C. This allowed us to easy fabricate large 
targets with high density suitable for sputtering TCO films. Without 
using any cold or hot pressing techniques, The ITZO ceramic 
reaches a high bulk density (~ 92 % of InR2ROR3R theoretical density). 
XRD diagrams show a high solubility limit for Sn and Zn when they 
are co-doped into InR2ROR3R forming a solid-solution. They confirm a 
bixbyte structure typical for InR2ROR3R with no extra peaks that could 
correspond to Sn and/or Zn based oxides. A very low electrical 
resistivity is obtained, for [InR2ROR3R:SnR0.10R]:ZnR0.10R (1.7×10P

-3
P Ω.cm, 

lower than ITO counterpart), due to high carrier mobility. This high 
mobility is correlated to the strong enhancement of the grain 
percolation as shown by SEM micrographs