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Indium oxide doped with both tin and zinc (ITZO): high density with highly conducting ceramic targets for sputtering TCO thin-film electrodes

dc.contributor.authorI. Saadeddin
dc.contributor.authorH. S. Hilal
dc.contributor.authorR. Decourt
dc.contributor.authorG. Campet
dc.contributor.authorB. Pecquenard
dc.date.accessioned2017-05-03T09:36:59Z
dc.date.available2017-05-03T09:36:59Z
dc.date.issued2010-08-02
dc.identifier.urihttps://hdl.handle.net/20.500.11888/9543
dc.description.abstract<p>Indium oxide doped with tin and zinc (ITZO) ceramics have been prepared by sintering powders mixture, which is embedded in alumina crucible, at 1300 °C. This allowed us to easy fabricate large targets with high density suitable for sputtering TCO films. Without using any cold or hot pressing techniques, The ITZO ceramic reaches a high bulk density (~ 92 % of In2O3 theoretical density). XRD diagrams show a high solubility limit for Sn and Zn when they are co-doped into In2O3 forming a solid-solution. They confirm a bixbyte structure typical for In2O3 with no extra peaks that could correspond to Sn and/or Zn based oxides. A very low electrical resistivity is obtained, for [In2O3:Sn0.10]:Zn0.10 (1.7×10-3 Ω.cm, lower than ITO counterpart), due to high carrier mobility. This high mobility is correlated to the strong enhancement of the grain percolation as shown by SEM micrographs.</p>en
dc.description.abstract<p>Indium oxide doped with tin and zinc (ITZO) ceramics have been prepared by sintering powders mixture, which is embedded in alumina crucible, at 1300 °C. This allowed us to easy fabricate large targets with high density suitable for sputtering TCO films. Without using any cold or hot pressing techniques, The ITZO ceramic reaches a high bulk density (~ 92 % of In2O3 theoretical density). XRD diagrams show a high solubility limit for Sn and Zn when they are co-doped into In2O3 forming a solid-solution. They confirm a bixbyte structure typical for In2O3 with no extra peaks that could correspond to Sn and/or Zn based oxides. A very low electrical resistivity is obtained, for [In2O3:Sn0.10]:Zn0.10 (1.7×10-3 Ω.cm, lower than ITO counterpart), due to high carrier mobility. This high mobility is correlated to the strong enhancement of the grain percolation as shown by SEM micrographs.</p>ar
dc.titleIndium oxide doped with both tin and zinc (ITZO): high density with highly conducting ceramic targets for sputtering TCO thin-film electrodesen
dc.titleIndium oxide doped with both tin and zinc (ITZO): high density with highly conducting ceramic targets for sputtering TCO thin-film electrodesar
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