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    • Electrical properties of the Yb/Ga2S3 interface 

      NazzalU, UEman O. (2016-03-23)
      GaR2RSR3R thin films are deposited onto Ytterbium substrate at vacuum pressure of 10P-5P mbar for use as new class of optoelectronic devices. The Yb/GaR2RSR3R interface is studied by means of current- voltage characteristics, ...